ALD簡介
原子層沉積技術(Atomic Layer Deposition,簡稱ALD)是一種在納米尺度上進行薄膜沉積的先進技術。通過將物質以單原子形式一層一層的鍍在基底表面,擁有優異的三維共形性、大面積成膜的均勻性和精確控制膜厚等特點。

ALD應用

ALD在能源領域應用
2009年,Miyaska課題組將鈣鈦礦材料MAPbI3用作燃料敏化太陽能電池的光伏活性層,正式開啟了鈣鈦礦太陽能電池的新紀元。ALD憑借其均勻成膜性、精準控制厚度和保形性等多種優勢,在光伏領域中發揮著重要作用。除此之外,ALD技術還可用于鋰電池薄膜涂層,提高電池性能。


ALD在泛半導體應用
隨著泛半導體行業的發展,對微型化和集成化要求越來越高,尺寸縮小至亞微米和納米量級,ALD作為一種高精度薄膜沉積技術,可用于晶體管柵極電介質層(高K材料)、金屬柵電極、有機發光顯示器涂層、銅互聯擴散阻擋層、DRAM電介質層、微流體和MEMS涂層、傳感器等眾多領域。

ALD在光學領域應用
由于 ALD 具有的三維共形沉積和大面積均勻性特點,已成功應用于高質量光學薄膜、增透膜、折射率可調的光學薄膜、波狀多層膜,改善了光子晶體的光學性質和可控性,增加了光子晶體在未來光學器件中的應用潛力。

公司致力于ALD高純半導體薄膜前驅體材料的自主研發和生產,成立以來,已陸續向多家半導體客戶提供了百余種前驅體新材料,包括高純硅基前驅體系列、High-k前驅體系列產品,部分新品已被客戶用于5nm以下制程薄膜設備。我們致力為客戶提供優質的產品并建立互信、長久的合作關系,產品具有自主知識產權且原材料國產化,打破國外壟斷的同時保證供應鏈的安全。研峰科技愿與國內芯片、高端顯示、光伏新能源等高端客戶一起攜手,解決高端半導體材料的把脖子難題,早日實現進口替代。
| Chemical Name | Tantalumethoxide |
|---|---|
| CAS Number | 6074-84-6 |
| PubChem Substance ID | 160806 |
| EC Number | 228-010-2 |
| Beilstein Registry Number | 3678999 |
| MDL Number | MFCD00049785 |
| Synonym | Tantalum(V) Ethoxide (Metals Basis), Nb {LY} Tantalum(V) Ethoxide (Metals Basis), Nb {} {LY} Tantalum(V) Ethoxide (Metals Basis), Nb {} {} {LY} Tantalum(V) Ethoxide (Metals Basis), Nb {} {} {} {LY} Tantalum(V) Ethoxide (Metals Basis), Nb {} {} {} {} {LY} Tantalum(V) Ethoxide (Metals Basis), Nb {} {} {} {} {} {LY} Tantalum(V) Ethoxide (Metals Basis), Nb {} {} {} {} {} {} {LY} Tantalum(V) Ethoxide (Metals Basis), Nb {} {} {} {} {} {} {} {LY} Tantalum(V) Ethoxide (Metals Basis), Nb {} {} {} {} {} {} {} {} {LY} Tantalum(V) Ethoxide (Metals Basis), Nb {} {} {} {} {} {} {} {} {} {LY} Tantalum(V) Ethoxide (Metals Basis), Nb {} {} {} {} {} {} {} {} {} {} {LY} Tantalum(V) Ethoxide (Metals Basis), Nb {} {} {} {} {} {} {} {} {} {} {} {LY} Tantalum(V) Ethoxide (Metals Basis), Nb {} {} {} {} {} {} {} {} {} {} {} {} {LY} Tantalum(V) Ethoxide (Metals Basis), Nb {} {} {} {} {} {} {} {} {} {} {} {} {} {LY} Tantalum(V) Ethoxide (Metals Basis), Nb {} {} {} {} {} {} {} {} {} {} {} {} |
| Chemical Name Translation | 乙醇鉭(V) |
| InChIKey | HSXKFDGTKKAEHL-UHFFFAOYSA-N |
| InChI | InChI=1S/5C2H5O.Ta/c5*1-2-3;/h5*2H2,1H3;/q5*-1;+5 |
| Canonical SMILES | [C2H6O.1/5Ta] |
| WGK Germany | 1 |
|---|---|
| Hazard statements | |
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| Personal Protective Equipment | Faceshields, full-face respirator (US), Gloves, Goggles, multi-purpose combination respirator cartridge (US), type ABEK (EN14387) respirator filter |
| Hazard Codes | C C,F C;F |
| Precautionary statements | |
| |
| Signal word | Danger |
| UN Number | 2920 UN2924 UN 2920 8/PG 2 |
| Risk Statements | |
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| Safety Statements | |
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| Storage condition | Store at room temperature, keep dry and cool {LY} Store at room temperature, keep dry and cool {} {LY} Store at room temperature, keep dry and cool {} {} {LY} Store at room temperature, keep dry and cool {} {} {} {LY} Store at room temperature, keep dry and cool {} {} {} {} {LY} Store at room temperature, keep dry and cool {} {} {} {} {} {LY} Store at room temperature, keep dry and cool {} {} {} {} {} {} {LY} Store at room temperature, keep dry and cool {} {} {} {} {} {} {} {LY} Store at room temperature, keep dry and cool {} {} {} {} {} {} {} {} {LY} Store at room temperature, keep dry and cool {} {} {} {} {} {} {} {} {} {LY} Store at room temperature, keep dry and cool {} {} {} {} {} {} {} {} {} {} {LY} Store at room temperature, keep dry and cool {} {} {} {} {} {} {} {} {} {} {} {LY} Store at room temperature, keep dry and cool {} {} {} {} {} {} {} {} {} {} {} {} {LY} Store at room temperature, keep dry and cool {} {} {} {} {} {} {} {} {} {} {} {} {} {LY} Store |
| Packing Group | III |
| Hazard Class | 3 |
| Restrict | 危險品 |
| Mol. Formula | C10H25O5Ta |
|---|---|
| Mol. Weight | 406 |
| Refractive index | n20/D 1.487(lit.) |
| Boiling Point | 155 °C at 0.01 mmHg |
| Density | 1.56 |
| Melting Point | 21 °C |
| Flash Point | 87°F |
| Solubility | Decomposes in water. Soluble in organic solvents |
| TSCA | Yes |
| Appearance | yellow liq. colorless to yellow liq. |
| Stability | moisture sensitive |
*以上化合物性質及應用等信息僅供參考